Charge collection properties of Monolithic Active Pixel Sensors (MAPS) irradiated with non-ionising radiation - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Conference Papers Year : 2007

Charge collection properties of Monolithic Active Pixel Sensors (MAPS) irradiated with non-ionising radiation

A. Besson
G. Deptuch
  • Function : Author
Y. Gornushkin
  • Function : Author

Abstract

Monolithic Active Pixel Sensors (MAPS) have been proposed as sensing devices for the vertex detectors at the International Linear Collider (ILC), of the STAR upgrade and of the Compressed Baryonic Matter (CBM) experiment. These applications require substantial tolerance to non-ionising doses, which range up to $\sim10^{13}n_{eq}/cm^2$. Intense studies were undertaken in order to measure the, so far widely unknown, radiation hardness of MAPS optimised for charged particle tracking and to identify the dominating effects of non-ionising radiation on these devices. This paper focuses on the recombination of signal electrons in the sensitive volume, which is the dominating problem provoked by bulk damage in MAPS. The dependence of this effect on some aspects of the pixel architecture is discussed, aiming to optimise the latter with respect to radiation tolerance.

Dates and versions

in2p3-00193737 , version 1 (04-12-2007)

Identifiers

Cite

M. Deveaux, S. Amar, A. Besson, J. Baudot, G. Claus, et al.. Charge collection properties of Monolithic Active Pixel Sensors (MAPS) irradiated with non-ionising radiation. 6th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices - RESMDD 2006, Oct 2006, Firenze, Italy. pp.134-138, ⟨10.1016/j.nima.2007.08.189⟩. ⟨in2p3-00193737⟩
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