Vacancy defect and carrier distributions in the high mobility electron gas formed at ion-irradiated SrTiO(3) surfaces - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Applied Physics Year : 2010

Vacancy defect and carrier distributions in the high mobility electron gas formed at ion-irradiated SrTiO(3) surfaces

E. Tafra
  • Function : Author
M. Basletic
  • Function : Author
A. Hamzic
  • Function : Author

Abstract

Using a combination of advanced characterization tools (positron annihilation spectroscopy, conductive-tip atomic force microscopy, and high-field magnetotransport), we have studied the extension, origin and properties of the high mobility electron gas (HMEG) generated by etching the SrTiO(3) surfaces with Ar(+) ions. Contrary to previous assumptions, we show that this HMEG is not confined to nanometric thickness but extends to a few micrometer from the surface. We discuss this unanticipated large spatial extension in terms of the striking large diffusion of oxygen vacancy-related defects. (C) 2010 American Institute of Physics.
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in2p3-00670129 , version 1 (14-02-2012)

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G. Herranz, O. Copie, A. Gentils, E. Tafra, M. Basletic, et al.. Vacancy defect and carrier distributions in the high mobility electron gas formed at ion-irradiated SrTiO(3) surfaces. Journal of Applied Physics, 2010, 107, pp.103704. ⟨10.1063/1.3369438⟩. ⟨in2p3-00670129⟩
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