Vacancy defect and carrier distributions in the high mobility electron gas formed at ion-irradiated SrTiO(3) surfaces
Résumé
Using a combination of advanced characterization tools (positron annihilation spectroscopy, conductive-tip atomic force microscopy, and high-field magnetotransport), we have studied the extension, origin and properties of the high mobility electron gas (HMEG) generated by etching the SrTiO(3) surfaces with Ar(+) ions. Contrary to previous assumptions, we show that this HMEG is not confined to nanometric thickness but extends to a few micrometer from the surface. We discuss this unanticipated large spatial extension in terms of the striking large diffusion of oxygen vacancy-related defects. (C) 2010 American Institute of Physics.