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Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

E. Oliviero 1 M.-L. David 2 P. F. P. Fichtner M.F. Beaufort 2 J-F. Barbot 2 
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
Abstract : The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 degrees C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 degrees C annealing, complete recrystallization takes place and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {311} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation. (C) 2013 American Institute of Physics. []
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Submitted on : Wednesday, May 22, 2013 - 4:35:12 PM
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E. Oliviero, M.-L. David, P. F. P. Fichtner, M.F. Beaufort, J-F. Barbot. Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering. Journal of Applied Physics, American Institute of Physics, 2013, 113, pp.083515. ⟨10.1063/1.4793507⟩. ⟨in2p3-00824985⟩



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