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Development of ultra-low noise HEMTs for cryoelectronics at <= 4.2 k

E. Gremion 1, 2 A. Cavanna 1 L.X. Liang 1 U. Gennser 1 M.C. Cheng M. Fesquet 2 G. Chardin 3 Alain Benoit 4 Yun Jin 1 
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière
Abstract : We report on DC and noise characteristics at 4.2 K of High Electron Mobility Transistors (HEMTs) which have been realized at LPN/CNRS. This work is aimed to develop high performance, low-power, low-frequency noise and low-temperature field-effect transistors for the future cryoelectronics. A high quality two-dimensional electron gas (2DEG) based on AlGaAs/GaAs heterostructure has been used to realize appropriately designed HEMTs with different gate configurations. With these transistors, we have obtained, for example, a transconductance of about 100 mS and a voltage gain of 26 with a power dissipation of less than 100 mu W at 4.2 K; and a corresponded equivalent input voltage noise of 1.2 nV/Hz(1/2) at 1 kHz and as low as 0.12 nV/Hz(1/2)s at 100 kHz.
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Submitted on : Thursday, May 23, 2013 - 5:09:29 PM
Last modification on : Tuesday, October 18, 2022 - 3:34:56 AM

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E. Gremion, A. Cavanna, L.X. Liang, U. Gennser, M.C. Cheng, et al.. Development of ultra-low noise HEMTs for cryoelectronics at <= 4.2 k. Journal of Low Temperature Physics, 2008, 151, pp.971-978. ⟨10.1007/s10909-008-9780-z⟩. ⟨in2p3-00825472⟩



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