Development of ultra-low noise HEMTs for cryoelectronics at <= 4.2 k - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Low Temperature Physics Year : 2008

Development of ultra-low noise HEMTs for cryoelectronics at <= 4.2 k

Abstract

We report on DC and noise characteristics at 4.2 K of High Electron Mobility Transistors (HEMTs) which have been realized at LPN/CNRS. This work is aimed to develop high performance, low-power, low-frequency noise and low-temperature field-effect transistors for the future cryoelectronics. A high quality two-dimensional electron gas (2DEG) based on AlGaAs/GaAs heterostructure has been used to realize appropriately designed HEMTs with different gate configurations. With these transistors, we have obtained, for example, a transconductance of about 100 mS and a voltage gain of 26 with a power dissipation of less than 100 mu W at 4.2 K; and a corresponded equivalent input voltage noise of 1.2 nV/Hz(1/2) at 1 kHz and as low as 0.12 nV/Hz(1/2)s at 100 kHz.

Dates and versions

in2p3-00825472 , version 1 (23-05-2013)

Identifiers

Cite

E. Gremion, A. Cavanna, L.X. Liang, U. Gennser, M.C. Cheng, et al.. Development of ultra-low noise HEMTs for cryoelectronics at <= 4.2 k. Journal of Low Temperature Physics, 2008, 151, pp.971-978. ⟨10.1007/s10909-008-9780-z⟩. ⟨in2p3-00825472⟩
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