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Conference Papers Year : 2008

Ion beam irradiation of Sn films deposited on YSZ(100)

Abstract

This paper reports the formation processes of crystalline Sn nanostructured films grown under ultra high vacuum conditions on monocrystalline yttria-stabilized zirconia (YSZ) substrates with (10 0) orientation. The microstructure of the films was analyzed using SEM and X-ray diffraction. Evaporation of Sit films yields crystallographically well-defined metallic islands of different shapes depending on the substrate temperature. The overall growth mechanism appears to follow the Stranski-Krastanov type. Irradiation of deposited films was performed at room temperature with 4 MeV Au2+ ions at a fluence of 10(15) cm(-2) to induce material decomposition and aggregation of host atoms. X-ray diffraction and Rutherford backscattering spectrometry (RBS) experiments conducted on Sn films deposited on YSZ(l 00) prior to and after irradiation demonstrate that ion irradiation drives a structural phase transformation for Sri and Zr-rich compositions. The microstructural evolution upon ion irradiation was also examined by cross-sectional transmission electron microscopy (TEM). (C) 2008 Published by Elsevier B.V.

Dates and versions

in2p3-00825679 , version 1 (24-05-2013)

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N. Chaabane, P. Trocellier, S. Poissonnet, L. Thome. Ion beam irradiation of Sn films deposited on YSZ(100). 14th International Conference on Radiation Effects in Insulators (REI-14), Aug 2007, Caen, France. pp.3148-3152, ⟨10.1016/j.nimb.2008.03.221⟩. ⟨in2p3-00825679⟩
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