Chemically sensitive amorphization process in the nanolaminated Cr2AC (A = Al or Ge) system from TEM in situ irradiation - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Nuclear Materials Year : 2013

Chemically sensitive amorphization process in the nanolaminated Cr2AC (A = Al or Ge) system from TEM in situ irradiation

Matthieu Bugnet
E. Oliviero

Abstract

The effect of 320 keV Xe2+ ion-irradiation in Cr2AlC and Cr2GeC is investigated in situ in the transmission electron microscope. Both compounds amorphize at moderate fluences (1013-1014 Xe cm−2) but exhibit different amorphization mechanisms, bearing witness of the major influence of the chemical composition of the nanolaminated Mn+1AXn phases. It is proposed that amorphization takes place via a direct impact amorphization process in Cr2GeC whereas it is governed by a defect accumulation process in Cr2AlC.

Dates and versions

in2p3-00853276 , version 1 (22-08-2013)

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Matthieu Bugnet, V. Mauchamp, E. Oliviero, M. Jaouen, T. Cabioc’h. Chemically sensitive amorphization process in the nanolaminated Cr2AC (A = Al or Ge) system from TEM in situ irradiation. Journal of Nuclear Materials, 2013, 441, pp.133-137. ⟨10.1016/j.jnucmat.2013.05.028⟩. ⟨in2p3-00853276⟩
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