Modelling of the surface-event identification mechanism in Ge detectors equipped with NbSi thin films - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Low Temperature Physics Year : 2008

Modelling of the surface-event identification mechanism in Ge detectors equipped with NbSi thin films

Abstract

A new generation of germanium composite bolometers, equipped with NbSi thin films, has been developed in the framework of the EDELWEISS experiment, presenting impressive surface event identification capabilities and a substantial improvement in the background rejection of heat and ionization detectors. In this work we present a simple thermal model which explain the surface-event identification mechanism via NbSi thin films sensors.

Dates and versions

in2p3-00854123 , version 1 (26-08-2013)

Identifiers

Cite

E. Olivieri, L. Berge, M. Chapellier, S. Collin, Y. Dolgorouky, et al.. Modelling of the surface-event identification mechanism in Ge detectors equipped with NbSi thin films. Journal of Low Temperature Physics, 2008, 151, pp.884-890. ⟨10.1007/s10909-008-9760-3⟩. ⟨in2p3-00854123⟩
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