Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Materials Science Year : 2015

Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

Abstract

AlN, GaN, and InN were irradiated at room temperature with monatomic swift heavy ions and high-energy fullerenes. Ion track formation was studied using transmission electron microscopy in both plane view and cross-sectional modes. A full experimental description of ion track formation in these compounds is presented. AlN shows a remarkable resistance towards track formation; InN is the most sensitive and shows partial decomposition, likely into N-2 and metallic clusters; the overlapping of the amorphous tracks in GaN does not give an amorphous layer because of a track-induced recrystallization. We discuss the application of the inelastic thermal spike model, which allows good and simple predictions of track radii in oxides, to the studied III-nitrides, and in general to semiconductors.
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in2p3-01168587 , version 1 (26-06-2015)

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M. Sall, I. Monnet, Frederic Moisy, C. Grygiel, S. Jublot-Leclerc, et al.. Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model. Journal of Materials Science, 2015, 50 (issue 15), pp.5214-5227. ⟨10.1007/s10853-015-9069-y⟩. ⟨in2p3-01168587⟩
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