SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Conference Poster Year : 2017

SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage

Abstract

Radiation tests with 14.2 MeV neutrons were performed at ultra low bias voltages on COTS SRAMs manufactured on 130nm, 90nm and 65nm CMOS processes. Experimental results with power supplies in 0.5V-3.17V are presented and discussed

Domains

Electronics
No file

Dates and versions

in2p3-01735635 , version 1 (16-03-2018)

Identifiers

  • HAL Id : in2p3-01735635 , version 1

Cite

J.A. Clemente, J.A. Fraire, M. Solinas, F.J. Franco, Francesca Villa, et al.. SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage . Conference on Radiation Effects on Components and Systems (RADECS 2017), Oct 2017, Geneva, Switzerland. , 2017. ⟨in2p3-01735635⟩
0 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More