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Poster De Conférence Année : 2005

RRR of Copper Coating and Low Temperature Electrical Resistivity of Material for TTF Couplers

Résumé

In the framework of the R&D program on the TTF III main RF coupler, IPN Orsay developed in close collaboration with LAL institute, a dedicated facility for the electrical characterization of different materials at low temperature. This apparatus was used for measuring the electrical resistivity versus temperature (4.2 K- 300K) of various samples produced in the industry. These tests were performed in order to compare the RRR of the samples, qualify and find the optimum parameters for the coating process. Seven flat samples were tested in a saturated liquid helium bath under ~1013 mbar pressure: measurements were performed on bare 316L samples, nickel coated 316L samples, and copper coated 316L samples with a nickel under layer. We investigated, in particular, the effect of vacuum annealing at 400°C on the RRR of the copper coating. Our experimental data are compared to previous measurements reported by other groups, and theoretical results (e.g. Gruneisen-Bloch equation) and a good agreement was found. Finally, the tested samples fulfil the TTF III coupler design parameters requirements in terms of heat loads to the refrigerator at 2 K, 4 K and 70 K.
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Dates et versions

in2p3-00123410 , version 1 (09-01-2007)

Identifiants

  • HAL Id : in2p3-00123410 , version 1

Citer

M. Fouaidy, N. Hammoudi. RRR of Copper Coating and Low Temperature Electrical Resistivity of Material for TTF Couplers. 12th International Workshop on RF Superconductivity (SRF 2005), Jul 2005, Ithaca, United States. 2005. ⟨in2p3-00123410⟩
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