Comparison between ion beam and thermal annealing-induced solid epitaxy in Fe-implanted Si - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Book Sections Year : 1994

Comparison between ion beam and thermal annealing-induced solid epitaxy in Fe-implanted Si

Jocelyne Lorgeril  : Connect in order to contact the contributor

https://hal.in2p3.fr/in2p3-00001719

Submitted on : Tuesday, April 20, 1999-3:51:26 PM

Last modification on : Thursday, April 11, 2024-1:18:11 PM

No file

Dates and versions

in2p3-00001719 , version 1 (20-04-1999)

Identifiers

  • HAL Id : in2p3-00001719 , version 1

Cite

X.W. Lin, J. Desimoni, H. Bernas, Z. Liliental-Weber, J. Washburn. Comparison between ion beam and thermal annealing-induced solid epitaxy in Fe-implanted Si. Silicides, germanides and their interfaces, M.R.S., pp.97-102, 1994, Materials Research Society Symposia Proceedings. ⟨in2p3-00001719⟩

Export

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

IN2P3 CSNSM CNRS UNIV-PARIS-SACLAY
2 View
0 Download

Share

Gmail Facebook X LinkedIn More