Effect of Ge-dots buried below the interface on the transport properties of Schottky diodes - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Conference Papers Physica E: Low-dimensional Systems and Nanostructures Year : 2003

Effect of Ge-dots buried below the interface on the transport properties of Schottky diodes

A. Hattab
  • Function : Author
F. Dufaye
  • Function : Author
F. Meyer
  • Function : Author
Yam Vy
  • Function : Author
Thanh Vinh Le
  • Function : Author
D. Bouchier
  • Function : Author
R. Meyer
  • Function : Author
O. Schneegans
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Dates and versions

in2p3-00013947 , version 1 (21-08-2003)

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  • HAL Id : in2p3-00013947 , version 1

Cite

A. Hattab, F. Dufaye, F. Meyer, Yam Vy, Thanh Vinh Le, et al.. Effect of Ge-dots buried below the interface on the transport properties of Schottky diodes. International Conference on Superlattices Nano-Structures and Nano-Devices ICSNN 2002, Jul 2002, Toulouse, France. pp.648-650. ⟨in2p3-00013947⟩
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