Latent tracks formation in silicon single crystals irradiated with fullerenes in the electronic regime - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Year : 1998

Latent tracks formation in silicon single crystals irradiated with fullerenes in the electronic regime

B. Canut
  • Function : Author
N. Bonardi
  • Function : Author
S.M.M. Ramos
  • Function : Author
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in2p3-00014860 , version 1 (10-01-2000)

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  • HAL Id : in2p3-00014860 , version 1

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B. Canut, N. Bonardi, S.M.M. Ramos, S. Della-Negra. Latent tracks formation in silicon single crystals irradiated with fullerenes in the electronic regime. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998, 146, pp.296-301. ⟨in2p3-00014860⟩
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