Damage created in silicon by 1 MeV O$^+$ ions as a function of beam power - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Conference Papers Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Year : 1992

Damage created in silicon by 1 MeV O$^+$ ions as a function of beam power

No file

Dates and versions

in2p3-00015889 , version 1 (30-05-2000)

Identifiers

  • HAL Id : in2p3-00015889 , version 1

Cite

A. Grob, J.J. Grob, P. Siffert. Damage created in silicon by 1 MeV O$^+$ ions as a function of beam power. Spring Meeting of the European Materials Research Society (E-Mrs) Symposium C on High Energy Ion Implantation, May 1991, Strasbourg, France. pp.309-313. ⟨in2p3-00015889⟩
1 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More