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Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 1990

EPR evidence for As interstitial-related defects in semi-insulating GaAs

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in2p3-00016047 , version 1 (07-06-2000)

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  • HAL Id : in2p3-00016047 , version 1

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E. Christophel, T. Benchiguer, A. Goltzene, C. Schwab, Guangyou Wang, et al.. EPR evidence for As interstitial-related defects in semi-insulating GaAs. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1990, 42, pp.3461. ⟨in2p3-00016047⟩
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