Improvement of plasma deposited a-Ge: H thin films by hydrogen dilution of germane

C. Godet; I. Elzawawi; M.L. Theye; Mélanie Gauthier; J.P. Stoquert

Journal Articles Solid State Communications Year : 1990

Improvement of plasma deposited a-Ge: H thin films by hydrogen dilution of germane

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1

C. Godet

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PersonId : 496
IdHAL : christian-godet
IdRef : 032545134

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I. Elzawawi

Function : Author

M.L. Theye

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Mélanie Gauthier

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J.P. Stoquert

Function : Author

Institut de Recherches Subatomiques

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https://hal.in2p3.fr/in2p3-00016177

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in2p3-00016177 , version 1 (30-06-2000)

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C. Godet, I. Elzawawi, M.L. Theye, Mélanie Gauthier, J.P. Stoquert. Improvement of plasma deposited a-Ge: H thin films by hydrogen dilution of germane. Solid State Communications, 1990, 74, pp.721. ⟨in2p3-00016177⟩

Improvement of plasma deposited a-Ge: H thin films by hydrogen dilution of germane

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