Dose effects during solid phase epitaxial regrowth of boron implanted, germanium amorphized silicon induced by rapid thermal annealing - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Applied Physics Letters Year : 1988

Dose effects during solid phase epitaxial regrowth of boron implanted, germanium amorphized silicon induced by rapid thermal annealing

W.O. Adekoya
  • Function : Author
J.C. Muller
  • Function : Author
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in2p3-00017456 , version 1 (26-09-2000)

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  • HAL Id : in2p3-00017456 , version 1

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W.O. Adekoya, M. Hage-Ali, J.C. Muller, P. Siffert. Dose effects during solid phase epitaxial regrowth of boron implanted, germanium amorphized silicon induced by rapid thermal annealing. Applied Physics Letters, 1988, 53, pp.511. ⟨in2p3-00017456⟩
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