Dose effects during solid phase epitaxial regrowth of boron implanted, germanium amorphized silicon induced by rapid thermal annealing

W.O. Adekoya; M. Hage-Ali; J.C. Muller; P. Siffert

Journal Articles Applied Physics Letters Year : 1988

Dose effects during solid phase epitaxial regrowth of boron implanted, germanium amorphized silicon induced by rapid thermal annealing

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1

W.O. Adekoya

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M. Hage-Ali

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Institut de Recherches Subatomiques

J.C. Muller

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P. Siffert

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Institut de Recherches Subatomiques

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Submitted on : Tuesday, September 26, 2000-3:47:28 PM

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in2p3-00017456 , version 1 (26-09-2000)

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W.O. Adekoya, M. Hage-Ali, J.C. Muller, P. Siffert. Dose effects during solid phase epitaxial regrowth of boron implanted, germanium amorphized silicon induced by rapid thermal annealing. Applied Physics Letters, 1988, 53, pp.511. ⟨in2p3-00017456⟩

Dose effects during solid phase epitaxial regrowth of boron implanted, germanium amorphized silicon induced by rapid thermal annealing

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