Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ions - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Solid-State Electronics Year : 1974

Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ions

J.C. Muller
  • Function : Author
R. Stuck
  • Function : Author
Institut de Recherches Subatomiques
R. Berger
  • Function : Author
P. Siffert
  • Function : Author
Institut de Recherches Subatomiques

Yvette Heyd  : Connect in order to contact the contributor

https://hal.in2p3.fr/in2p3-00018451

Submitted on : Thursday, December 21, 2000-8:48:05 AM

Last modification on : Friday, June 2, 2023-3:36:26 PM

No file

Dates and versions

in2p3-00018451 , version 1 (21-12-2000)

Identifiers

  • HAL Id : in2p3-00018451 , version 1

Cite

J.C. Muller, R. Stuck, R. Berger, P. Siffert. Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ions. Solid-State Electronics, 1974, 17, pp.1293-1297. ⟨in2p3-00018451⟩

Export

BibTeX TEI Dublin Core DC Terms EndNote Datacite

Collections

IN2P3 CNRS CGE SITE-ALSACE
5 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More