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Journal Articles Applied Surface Science Year : 1990

Annealing kinetics during rapid thermal processing of excimer laser-induced defects in virgin silicon

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in2p3-00019447 , version 1 (30-05-2001)

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  • HAL Id : in2p3-00019447 , version 1

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B. Hartiti, A. Slaoui, J.C. Muller, P. Siffert. Annealing kinetics during rapid thermal processing of excimer laser-induced defects in virgin silicon. Applied Surface Science, 1990, 46, pp.371-374. ⟨in2p3-00019447⟩
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