Direct measurement of the maximum depth phase change of crystal silicon under pulsed laser irradiation - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Journal Articles Journal of Applied Physics Year : 1984

Direct measurement of the maximum depth phase change of crystal silicon under pulsed laser irradiation

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in2p3-00019467 , version 1 (31-05-2001)

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  • HAL Id : in2p3-00019467 , version 1

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M. Toulemonde, R. Heddache, F. Nielsen, P. Siffert. Direct measurement of the maximum depth phase change of crystal silicon under pulsed laser irradiation. Journal of Applied Physics, 1984, 56, pp.1878-1880. ⟨in2p3-00019467⟩
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