This paper presents a methodology based on Monte-Carlo simulations of RBS spectra recorded in channeling geometry to obtain a quantitative analysis of the damage induced in zirconia single crystals irradiated with high-energy ions. The results show that the concentration of defects is almost constant at depths above $\sim$ 500 nm, with a decreasing value in the near-surface region of the crystal. The defect accumulation kinetics exhibits a saturation at a fluence of 5 $\times$ 10$^{13}$ cm$^{−2}$ and can be reproduced by assuming the formation of tracks (diameter $\sim$2 nm) by electronic excitation processes.