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Communication Dans Un Congrès Année : 2006

New Geant4 physics processes for simulation at the electronvolt scale

Résumé

The extension of Geant4 simulation capabilities down to the electronvolt scale is required for precision studies of radiation effects on electronics and detector components, and for micro-/nano-dosimetry studies in various experimental environments. A project is in progress to extend the coverage of Geant4 physics to this energy range. The complexity of the problem domain is discussed - such as, for instance, the fact that in this energy range process models are material-dependent. The physics models of new processes implemented in the Geant4 Toolkit are presented: elastic scattering, charge increase/decrease, excitation, ionisation. Anew approach to policy-based process design in Geant4 is described. Results concerning various processes at the electronvolt scaleare presented.
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Dates et versions

in2p3-00101348 , version 1 (28-09-2006)

Identifiants

  • HAL Id : in2p3-00101348 , version 1

Citer

M.G. Pia, R. Capra, Z. Francis, S. Incerti, B. Mascialino, et al.. New Geant4 physics processes for simulation at the electronvolt scale. International Conference on Computing in High Energy and Nuclear Physics, CHEP 06, Feb 2006, Mumbai, India. ⟨in2p3-00101348⟩
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