Athermal crystallization induced by electronic excitations in ion-irradiated silicon carbide

A. Benyagoub; A. Audren; L. Thomé; F. Garrido

doi:10.1063/1.2405410

Journal Articles Applied Physics Letters Year : 2006

Athermal crystallization induced by electronic excitations in ion-irradiated silicon carbide

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1
2

A. Benyagoub

Function : Author
PersonId : 741488
IdHAL : abdenacer-benyagoub
IdRef : 069163782

Centre Interdisciplinaire de Recherche Ions Lasers

A. Audren

Function : Author

Centre Interdisciplinaire de Recherche Ions Lasers

L. Thomé

Function : Author

Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse

F. Garrido

Function : Author

Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse

Keywords

silicon compounds wide band gap semiconductors ion beam effects crystallisation

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Other [cond-mat.other]

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https://hal.in2p3.fr/in2p3-00127841

Submitted on : Tuesday, January 30, 2007-9:03:26 AM

Last modification on : Wednesday, April 24, 2024-11:28:54 AM

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in2p3-00127841 , version 1 (30-01-2007)

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HAL Id : in2p3-00127841 , version 1
DOI : 10.1063/1.2405410

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A. Benyagoub, A. Audren, L. Thomé, F. Garrido. Athermal crystallization induced by electronic excitations in ion-irradiated silicon carbide. Applied Physics Letters, 2006, 89, pp.241914. ⟨10.1063/1.2405410⟩. ⟨in2p3-00127841⟩

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Athermal crystallization induced by electronic excitations in ion-irradiated silicon carbide

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