Cryogenic SiGe Hetero-Junction Bipolar Transistors from Standard Technologies for Low Noise FLL - IN2P3 - Institut national de physique nucléaire et de physique des particules Access content directly
Conference Papers Year : 2006

Cryogenic SiGe Hetero-Junction Bipolar Transistors from Standard Technologies for Low Noise FLL

D. Prêle
  • Function : Author
G. Sou
  • Function : Author
G. Klisnick
M. Redon
  • Function : Author
E. Bréelle
  • Function : Author
  • PersonId : 1380717
No file

Dates and versions

in2p3-00196815 , version 1 (13-12-2007)

Identifiers

  • HAL Id : in2p3-00196815 , version 1

Cite

D. Prêle, G. Sou, G. Klisnick, M. Redon, E. Bréelle, et al.. Cryogenic SiGe Hetero-Junction Bipolar Transistors from Standard Technologies for Low Noise FLL. 13th IEEE International Conference on Electronics, Circuits and Systems, ICECS-2006, Dec 2006, Nice, France. pp.525-528. ⟨in2p3-00196815⟩
9 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More