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Radiation Damage Tests at 1 Grad Dose on 65 nm CMOS Transistors

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https://hal.in2p3.fr/in2p3-00996607
Contributor : Danielle Cristofol Connect in order to contact the contributor
Submitted on : Monday, May 26, 2014 - 4:19:31 PM
Last modification on : Tuesday, October 19, 2021 - 10:50:35 PM

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  • HAL Id : in2p3-00996607, version 1

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M. Barbero. Radiation Damage Tests at 1 Grad Dose on 65 nm CMOS Transistors. Front End Electronics (FEE 2014), May 2014, Chicago, United States. ⟨in2p3-00996607⟩

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