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Conference Papers Year : 2014

Radiation Damage Tests at 1 Grad Dose on 65 nm CMOS Transistors

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in2p3-00996607 , version 1 (26-05-2014)

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  • HAL Id : in2p3-00996607 , version 1

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M. Barbero. Radiation Damage Tests at 1 Grad Dose on 65 nm CMOS Transistors. Front End Electronics (FEE 2014), May 2014, Chicago, United States. ⟨in2p3-00996607⟩
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