A few industrial CMOS foundries offer a High Voltage (HV) design option and even in some cases the possibility to use High Resistivity (HR) substrate, allowing the creation of a deep depletion zone, suitable for particle detection with active pixel detectors. These so-called HV-CMOS detectors are a possible solution to face the new challenges brought by the upgrades of the Large Hadron Collider at CERN and of the ATLAS future pixel vertex detectors. Indeed, the planned increase towards High Luminosity, with peak luminosities of up to 1035.cm-2.s-1 requires a fundamental redesign of the complete inner detector due to both increased radiation damage as well as increased occupancy in the sub-detectors. The current ATLAS R&D program is qualifying a few HV-CMOS commercial technologies suitable for hybrid pixel replacement. These technologies offer in-pixel signal processing solutions, reduce the pixel cluster sizes and are potentially cheaper than the current hybrid solutions. Studies concerning radiation tolerance are also very encouraging. The last experimental results in three different processes will be reviewed and presented.