Bulk and surface structural properties of Si$_{1-x-y}$Ge$_x$C$_y$ layers processed on Si(001) by pulsed laser induced epitaxy

C. Guedj; J. Boulmer; D. Bouchier; C. Clerc; G. Calvarin; C. Godet; Pere Roca I Cabarrocas; F. Houze; D. Mencaraglia

Journal articles

Bulk and surface structural properties of Si$_{1-x-y}$Ge$_x$C$_y$ layers processed on Si(001) by pulsed laser induced epitaxy

C. Guedj J. Boulmer D. Bouchier C. Clerc ¹ G. Calvarin C. Godet Pere Roca I Cabarrocas F. Houze D. Mencaraglia

1 CSNSM PS1

CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière

Document type :

Journal articles

Domain :

Physics [physics] / Physics [physics] / Instrumentation and Detectors [physics.ins-det]

Complete list of metadata

http://hal.in2p3.fr/in2p3-00000499
Contributor : Jocelyne Lorgeril Connect in order to contact the contributor
Submitted on : Thursday, February 18, 1999 - 10:40:53 AM
Last modification on : Wednesday, September 16, 2020 - 5:37:35 PM

Bulk and surface structural properties of Si$_{1-x-y}$Ge$_x$C$_y$ layers processed on Si(001) by pulsed laser induced epitaxy

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Bulk and surface structural properties of Si$_{1-x-y}$Ge$_x$C$_y$ layers processed on Si(001) by pulsed laser induced epitaxy

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