Bulk and surface structural properties of Si$_{1-x-y}$Ge$_x$C$_y$ layers processed on Si(001) by pulsed laser induced epitaxy - Archive ouverte HAL Access content directly
Journal Articles Applied Surface Science Year : 1996

Bulk and surface structural properties of Si$_{1-x-y}$Ge$_x$C$_y$ layers processed on Si(001) by pulsed laser induced epitaxy

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1
C. Guedj
  • Function : Author
J. Boulmer
  • Function : Author
D. Bouchier
  • Function : Author
C. Clerc
  • Function : Author
G. Calvarin
  • Function : Author
C. Godet
Pere Roca I Cabarrocas
F. Houze
D. Mencaraglia
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in2p3-00000499 , version 1 (18-02-1999)

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  • HAL Id : in2p3-00000499 , version 1

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C. Guedj, J. Boulmer, D. Bouchier, C. Clerc, G. Calvarin, et al.. Bulk and surface structural properties of Si$_{1-x-y}$Ge$_x$C$_y$ layers processed on Si(001) by pulsed laser induced epitaxy. Applied Surface Science, 1996, 102, pp.28-32. ⟨in2p3-00000499⟩

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