Bulk and surface structural properties of Si$_{1-x-y}$Ge$_x$C$_y$ layers processed on Si(001) by pulsed laser induced epitaxy

C. Guedj; J. Boulmer; D. Bouchier; C. Clerc; G. Calvarin; C. Godet; Pere Roca I Cabarrocas; F. Houze; D. Mencaraglia

Journal Articles Applied Surface Science Year : 1996

Bulk and surface structural properties of Si$_{1-x-y}$Ge$_x$C$_y$ layers processed on Si(001) by pulsed laser induced epitaxy

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C. Guedj

Function : Author

J. Boulmer

Function : Author

D. Bouchier

Function : Author

C. Clerc

Function : Author

CSNSM PS1

G. Calvarin

Function : Author

C. Godet

Function : Author
PersonId : 496
IdHAL : christian-godet
IdRef : 032545134

CV

Pere Roca I Cabarrocas

Function : Author
PersonId : 760063
ORCID : 0000-0003-2241-2762
IdRef : 034125663

F. Houze

Function : Author
PersonId : 13067
IdHAL : frederic-houze
ORCID : 0000-0001-8054-3184
IdRef : 15620584X

CV

D. Mencaraglia

Function : Author
PersonId : 20238
IdHAL : denis-mencaraglia
IdRef : 032968809

CV

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Physics [physics] Physics [physics] Instrumentation and Detectors [physics.ins-det]

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Submitted on : Thursday, February 18, 1999-10:40:53 AM

Last modification on : Wednesday, September 16, 2020-5:37:35 PM

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in2p3-00000499 , version 1 (18-02-1999)

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HAL Id : in2p3-00000499 , version 1

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C. Guedj, J. Boulmer, D. Bouchier, C. Clerc, G. Calvarin, et al.. Bulk and surface structural properties of Si$_{1-x-y}$Ge$_x$C$_y$ layers processed on Si(001) by pulsed laser induced epitaxy. Applied Surface Science, 1996, 102, pp.28-32. ⟨in2p3-00000499⟩

Bulk and surface structural properties of Si$_{1-x-y}$Ge$_x$C$_y$ layers processed on Si(001) by pulsed laser induced epitaxy

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